TN5325 Supertex Inc, TN5325 Datasheet

TN5325

Manufacturer Part Number

TN5325

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TN5325.pdf (2 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TN5325K1-G

Manufacturer:

NXP

Quantity:

12 000

Current page: 1 of 2
Download datasheet (447Kb)

Ordering Information

* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

** Shipped on 2,000 piece carrier tape and reels.

Features

❏ Low threshold – 2.0V max.

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Low C

❏ Excellent thermal stability

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Battery operated systems

❏ Photo voltaic drives

❏ Analog switches

❏ General purpose line drivers

❏ Telecom switches

Absolute Maximum Ratings

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Distance of 1.6 mm from case for 10 seconds.

250V

DSS

DGS

ISS

(max)

7.0Ω

and fast switching speeds

DS(ON)

(max)

2.0V

GS(th)

(min)

1.2A

D(on)

N-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

TO-236AB*

TN5325K1

Order Number / Package

300°C

± 20V

DGS

DSS

TN5325N3

TO-92

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Where ❋ = 2-week alpha date code

Product marking for TO-243AA

Note: See Package Outline section for dimensions.

TO-243AA**

TN5325N8

TO-92

S G D

TN3C❋

TO-243AA

where ❋ = 2-week alpha date code

(SOT-89)

Product marking for SOT-23:

Low Threshold

N3C❋

TN5325

TO-236AB

(SOT-23)

Related parts for TN5325

TN5325 Summary of contents

Page 1

... Package Options BV DSS BV DGS ± 20V TO-92 -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 TN5325 Low Threshold Product marking for SOT-23: N3C❋ where ❋ = 2-week alpha date code TN3C❋ TO-243AA TO-236AB (SOT-89) ...

Page 2

... PULSE GENERATOR R gen t (OFF d(OFF) F INPUT 10% 90% 2 TN5325 θ θ DRM ° ° C/W C/W 200 350 150mA 400mA 125 170 215mA 800mA 15 78** 316mA 1.5A Unit Conditions 100µ ...

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