BFX48 Seme LAB, BFX48 Datasheet - Page 2

• Manufacturer Part Number: BFX48
• Description: PNP SILICON EPITAXIAL TRANSISTOR
• Manufacturer: Seme LAB

ELECTRICAL CHARACTERISTICS
*Pulsed: pulse duration = 300
THERMAL CHARACTERISTICS
Semelab plc.
t
toff
rbb’C
R
R
V
on
V
V
V
V
q
q
(BR)CEO*
(BR)CBO
(BR)EBO
th(j-case)
th(j-amb)
CE(sat)*
C
C
BE(sat)*
h
I
NF
CES
EBO
CBO
FE*
f
T
b’c
Collector Cut–off Current
Collector – Base Breakdown
Voltage
Collector– Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector – Emitter Saturation
Voltage
Base – Emitter
Saturation Voltage
DC Current Gain
Transistion Frequency
Emitter – Base
Capacitance
Collector-Base
Capacitance
Noise Figure
Turn-on time
Turn-off time
Feedback Time Constant
Thermal Resistance Junction - Case
Thermal Resistance Junction - Ambient
Parameter
Telephone [phone]. Fax [phone].
E-mail:
[e-mail]
m
s, duty cycle = 1%
Test Conditions
Website:
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
Tamb = -55°C
I
f = 100MHz
I
f = 1MHz
I
f = 1MHz
I
f = 100MHz
I
I
I
I
f = 80MHz
E
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
B1
C
BE
CE
(T j = 25°C unless otherwise stated)
= 0
= –10
= 0
= –10mA
= –1mA
= –10mA
= –50mA
= –1mA
= –10mA
= –50mA
= –10
= –100
= –10mA
= –50mA
= –10mA
= –10mA
= 0
= -1mA
= -50mA
= -50mA
= -10mA
= I
= 0
= -20V
B2
http://www.semelab.co.uk
m
m
=-5mA
A
A
m
A
Tamb = 125°C
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
Rg = 100
I
V
C
B
C
B
B
B
B
B
B
B1
CE
CE
CE
CE
CE
CE
EB
CB
CE
CE
= 0
= -0.1mA
= -1mA
= -5mA
= -0.1mA
= -1mA
= -5mA
= 0
= 10
= -5mA
= -0.5V
= -1V
= -1V
= -1V
= -1V
= -1V
= -20V
= -10V
= -5V
= -20V
m
A
W
`
Min.
400
-30
-30
40
70
90
20
30
-5
-0.77
Typ.
-0.1
130
160
550
175
486
2.2
3.5
80
40
20
95
4
Document. 2340
-0.13
-0.14
-0.75
Max. Unit
-0.3
-0.9
-1.1
160
-15
-15
BFX48
5.5
3.5
50
40
6
Issue 1
°C/W
°C/W
MHz
nA
m
pF
dB
ns
ns
ps
—
V
V
V
V
V
A