NSS20101J ON Semiconductor, NSS20101J Datasheet - Page 2

• Manufacturer Part Number: NSS20101J
• Description: 20 V 1.0 A / Low VCE(sat) NPN Transistor
• Manufacturer: ON Semiconductor

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3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage (Note 3)
Base −Emitter Turn−on Voltage (Note 3)
Cutoff Frequency
Input Capacitance (V
Output Capacitance (V
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
0
CB
EB
= 0.1 mAdc, I
= 10 mAdc, I
= 0.1 mAdc, I
= 10 mA, V
= 100 mA, V
= 500 mA, V
= 1.0 A, V
= 10 mA, I
= 0.10 A, I
= 0.5 A, I
= 1.0 A, I
= 0.5 A, I
= 0.5 A, V
= 100 mA, V
0
= 5.0 Vdc)
= 30 Vdc, I
20
B
B
B
CE
CE
B
B
= 0.050 A)
= 0.1 A)
= 50 mA)
T
CE
= 0.5 mA)
= 0.010 A)
CE
CE
CE
J
B
E
= 2.0 V)
= 2.0 V)
E
C
, JUNCTION TEMPERATURE (°C)
Note 1
40
= 2.0 V)
= 0)
Figure 1. Power Derating
= 0)
= 0)
= 0)
EB
= 2.0 V)
= 2.0 V)
= 2.0 V, f = 100 MHz)
CB
= 0.5 V, f = 1.0 MHz)
= 4.0 V, f = 1.0 MHz)
Characteristic
60
Note 2
80
(T
100
A
= 25°C unless otherwise noted)
TYPICAL CHARACTERISTICS
120
140
http://onsemi.com
160
2
600
500
400
300
200
100
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
0
I
I
BE(sat)
Cibo
BE(on)
h
CBO
EBO
f
0.001
FE
T
Min
200
200
150
100
6.0
0.01
20
40
I
Figure 2. DC Current Gain
C
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
Typ
350
40
6
0.1
0.015
0.040
0.115
0.220
Max
0.90
500
0.1
0.1
1.1
1
V
CE
= 2 V
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
pF
pF
V
V
V
10