BD4728G Rohm, BD4728G Datasheet - Page 7

• Manufacturer Part Number: BD4728G
• Description: RESET IC
• Manufacturer: Rohm

Voltage detectors
(1)Operation supply voltage range
(2)Grounding
(3)Miscellaneous
(4)Mal-function may happen when the device is used in the strong electromagnetic field.
(5)Bypass capacitor for noise rejection
(6)This IC is a bipolar IC which (as shown in Figure 5) has P+ isolation in the P substrate
NOTES FOR USE
Funtional circuit operation is guaranteed within operation ambient temperature,
as long as it is within operation supply voltage range. The electrical characteristics
standard value can not be guaranteed. However, there is no drastic variation in these
values, as long as it is within operation supply voltage range.
For the grounding shown in the application circuit, wire every ground to GND
terminal(3pin) in a short pattern arrangement to avoid electrical disturbance.
This product are produced with struct quality control, but might be destroyed in using
beyond absolute maximum ratings. Open IC destroyed a failure mode cannot be defined
(like short mode, or open mode).Therefore physical security countermeasure, like fuse,
is to be given when a specified mode to be beyond absolute maximum ratings is considered.
Please put into capacitor to reject noise between supply voltage pin and GND.
It recommends degree of 10μF capacitance capacitor. If extremely big capacitor is used,
transient response might be late. Please confirm sufficiently for the point.
and between the various pins. A P-N junction is formed from this P layer and the N layer
of each pin. For example the relation between each potentials is as follows,
(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic
diodes can result in mutual interference among circuits as well as operation faults and physical damage.
Accordingly, you must not use methods by which parasitic diodes operate,such as applying a voltage
that is lower than the GND (P substrate) voltage to an input pin.
N
(PIN A)
P
+
(PIN A)
P substrate
GND
Resistance
N
Parasitic diode
GND
P
Parasitic diode
Fig.11 Simplified structure of bipolar IC
P
+
N
(PIN B)
N
Parasitic diode
or transistor
P
+
(PIN B)
C
B
P substrate
B
E
N
Transistor (NPN)
N
GND
P
GND
E
C
Parasitic diode
or transistor
P
+
N
BD47××G series
GND
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