BCP69-10 Siemens Semiconductor Group, BCP69-10 Datasheet - Page 2

• Manufacturer Part Number: BCP69-10
• Description: PNP Silicon AF Transistor (For general AF application High collector current High current gain)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
I
AC characteristics
Transition frequency
I
1)
Semiconductor Group
C
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
= 10 A, I
= 30 mA, I
= 10 A, V
= 10 A, I
= 5 mA, V
= 500 mA, V
= 1 A, V
= 1 A, I
= 5 mA, V
= 1 A, V
= 100 mA, V
Pulse test conditions: t 300 s, D = 2 %.
A
= 5 V, I
= 25 V
= 25 V, T
= 25 ˚C, unless otherwise specified.
B
CE
CE
C
= 100 mA
B
B
CE
BE
= 0
= 1 V
= 1 V
B
A
= 0
= 0
CE
= 0
= 150 ˚C
CE
= 10 V
CE
= 0
1)
= 10 V
= 1 V
= 5 V, f = 100 MHz
1)
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
1)
2
Symbol
V
V
V
V
I
I
h
V
V
f
T
CB0
EB0
FE
(BR)CE0
(BR)CES
(BR)CB0
(BR)EB0
CEsat
BE
min.
20
25
25
5
–
–
–
50
85
85
100
160
60
–
–
–
–
Values
typ.
–
–
–
–
–
–
–
–
–
100
160
250
–
–
0.6
–
100
max.
–
–
–
–
100
100
100
–
375
160
250
375
–
0.5
–
1
–
BCP 69
Unit
V
nA
nA
–
V
MHz
A