2PD602A Philips Semiconductors, 2PD602A Datasheet - Page 3

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2PD602A

Manufacturer Part Number
2PD602A
Description
NPN general purpose transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 23
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
c
NPN general purpose transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
p
2PD602AQ
2PD602AR
2PD602AS
2PD602AQ
2PD602AR
2PD602AS
300 s;
PARAMETER
0.02.
PARAMETER
I
I
I
I
I
I
I
I
f = 100 MHz; note 1
E
E
C
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= 150 mA; V
= 500 mA; V
= 300 mA; I
= 50 mA; V
e
= 0; V
CB
CB
EB
3
CONDITIONS
= 60 V
= 60 V; T
= 4 V
CB
CE
B
CE
CE
= 10 V; f = 1 MHz
note 1
= 30 mA; note 1
= 10 V;
CONDITIONS
= 10 V; note 1
= 10 V; note 1
j
= 150 C
85
120
170
40
140
160
180
MIN.
VALUE
500
10
5
10
170
240
340
600
15
Product specification
MAX.
2PD602A
UNIT
K/W
nA
nA
mV
pF
MHz
MHz
MHz
A
UNIT

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