BU4508DX Philips Semiconductors, BU4508DX Datasheet - Page 4

• Manufacturer Part Number: BU4508DX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
February 1999
Silicon Diffused Power Transistor
Fig.7. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
Fig.9. Typical collector storage and fall time.
0.01
1.2
1.1
0.9
0.8
0.7
0.6
10
0.1
8
6
4
2
0
10
1
1
0
0
0.1
ts/tf/ us
VBESAT / V
VCESAT \ V
I
0.5
C
=5 A; T
Ths = 25 C
Ths = 85 C
1
1
1
j
IC = 5 A
= 85˚C; f = 16kHz
1.5
2
10
2
Ths = 85 C
ICsat = 5 A
Freq = 16 kHz
Ths = 25 C
Ths = 85 C
3
BU4508DF/X/Z
BU4508DF/X/Z
IC / A
BU4508D ts/tf
2.5
IB / A
IB / A
100
3
4
4
120
110
100
0.001
0.01
90
80
70
60
50
40
30
20
10
0.1
10
1.0E-07
0
1
Fig.10. Normalised power dissipation.
Fig.11. Transient thermal impedance.
Zth K/W
0
PD%
0.05
0.02
0.5
0.2
0.1
0
20
1.0E-05
PD% = 100 P
40
60
1.0E-03
Ths / C
t / s
P
80
D
Normalised Power Derating
D
/P
with heatsink compound
D 25˚C
t
p
Product specification
100
T
1.0E-01
BU4508DX
D =
120
BU4508AF
t
T
p
t
Rev 1.000
140
1.0E+01