BU4506 Philips Semiconductors, BU4506 Datasheet - Page 2

• Manufacturer Part Number: BU4506
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
July 1999
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
SYMBOL
I
I
BV
V
V
V
h
h
hs
SYMBOL
t
t
CES
CES
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
isol
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
30-60 Hz
Fig.1. Test circuit for V
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Switching times (16kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
6V
100R
CEOsust
2
Oscilloscope
1R
100-200R
Horizontal
Vertical
.
+ 50v
CONDITIONS
R.H.
CONDITIONS
V
V
T
I
I
L = 25 mH
I
I
I
I
CONDITIONS
I
B
B
C
C
C
C
Csat
j
BE
BE
= 1 mA
= 0 A; I
= 3.0 A; I
= 3.0 A; I
= 0.5 A; V
= 3 A; V
= 125 ˚C
65 % ; clean and dustfree
= 0 V; V
= 0 V; V
= 3.0 A; I
2
C
CE
= 100 mA;
B
B
CE
CE
250
200
100
CE
IC / mA
= 0.75 A
= 0.75 A
= 5 V
B1
0
= V
= V
= 5 V
= 0.6 A; (I
Fig.2. Oscilloscope display for V
CESMmax
CESMmax
;
B2
= -1.5 A)
MIN.
MIN.
800
7.5
0.8
4.2
VCE / V
-
-
-
-
-
-
TYP.
TYP.
TYP.
13.5
0.89
300
5.5
3.7
22
10
-
-
-
-
-
Product specification
VCEOsust
BU4506AF
MAX.
MAX.
MAX.
2500
0.98
450
min
1.0
2.0
3.0
7.3
4.6
CEOsust
-
-
-
-
Rev 1.000
.
UNIT
UNIT
UNIT
mA
mA
pF
ns
V
V
V
V
V
s