BD166 Motorola Inc, BD166 Datasheet - Page 2

• Manufacturer Part Number: BD166
• Description: Plastic Medium Power Silicon PNP Transistor
• Manufacturer: Motorola Inc

BD166
Note 1:
transistor; average junction temperature and second break-
down. Safe operating area curves indicate I C – V CE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
2
There are two limitations on the power handling ability of a
25
20
15
10
0.1
5
0
10
1
0
0.01
1.2
0.8
0.6
0.4
0.2
1
0
1
20
Figure 1. P D – T C Derating Curve
T J = + 150 C
40
T C , CASE TEMPERATURE ( C)
I C , COLLECTOR CURRENT (A)
Figure 4. Current Gain
60
0.05
I C = 0.1 A
80
+ 25 C
V CE = 2 V
5
0.1
100
0.25 A
10
120
– 25 C
140
Figure 3. Collector Saturation Region
0.5
160
0.5 A
I B , BASE CURRENT (mA)
1
50
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
The data of Figure 2 is based on T J(pk) = 150 _ C; T C is
0.05
0.01
100
150 _ C. At high case temperatures, thermal limitations will
0.5
0.1
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
10
1
1 A
5.0
10
Motorola Bipolar Power Transistor Device Data
V BE(sat) at I C /I B = 10
Figure 2. Safe Operating Area (see Note 1)
PULSE CURVES APPLY BELOW
T J = 25 C
7.0
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T C = 25 C
RATED V CEO
10
T J = 150 C
I C , COLLECTOR CURRENT (mA)
Figure 5. “On” Voltage
50
500
20
100
V CE(sat) at I C /I B = 10
V BE at V CE = 2 V
1000
dc
5.0 ms
30
100 s
1.0 ms
50
500
70
1000
100