BD136-10 Philips Semiconductors, BD136-10 Datasheet - Page 2

• Manufacturer Part Number: BD136-10
• Description: PNP power transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 12
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
High current (max. 1.5 A)
Low voltage (max. 80 V).
General purpose power applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
CBO
CEO
EBO
tot
PNP power transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BD136
BD138
BD140
BD136
BD138
BD140
PARAMETER
open emitter
open base
open collector
T
mb
2
70 C
PINNING
handbook, halfpage
CONDITIONS
Fig.1
PIN
1
2
3
Simplified outline (TO-126; SOT32)
and symbol.
1
emitter
collector, connected to metal part of
mounting surface
base
2
BD136; BD138; BD140
3
Top view
65
65
MIN.
DESCRIPTION
3
Product specification
8
+150
150
+150
45
60
100
45
60
80
5
1.5
2
1
MAX.
MAM272
2
1
V
V
V
V
V
V
V
A
A
A
W
C
C
C
UNIT