BD135-10 Philips Semiconductors, BD135-10 Datasheet - Page 3

• Manufacturer Part Number: BD135-10
• Description: NPN power transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T
1999 Apr 12
R
R
I
I
h
V
V
f
SYMBOL
h
-----------
h
j
CBO
EBO
T
SYMBOL
FE
CEsat
BE
th j-a
th j-mb
= 25 C unless otherwise specified.
NPN power transistors
FE1
FE2
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
BD135-10; BD137-10; BD139-10
BD135-16; BD137-16; BD139-16
PARAMETER
PARAMETER
I
I
I
V
I
(see Fig.2)
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
I
CE
C
I
I
I
= 0; V
= 0; V
= 0; V
= 150 mA; V
= 500 mA; I
= 500 mA; V
= 50 mA; V
C
C
C
= 2 V; (see Fig.2)
= 150 mA; V
= 5 mA
= 150 mA
= 500 mA
3
CB
CB
EB
CONDITIONS
= 30 V
= 30 V; T
= 5 V
CE
B
note 1
CE
CE
= 50 mA
= 5 V;
CONDITIONS
= 2 V;
= 2 V
CE
j
= 125 C
= 2 V
BD135; BD137; BD139
40
63
25
63
100
MIN.
VALUE
100
10
190
1.3
TYP.
Product specification
100
10
100
250
160
250
0.5
1
1.6
MAX.
UNIT
K/W
K/W
nA
nA
V
V
MHz
UNIT
A