DIM800DDM12 Dynex, DIM800DDM12 Datasheet - Page 2

• Manufacturer Part Number: DIM800DDM12
• Description: Dual Switch IGBT Module Preliminary Information
• Manufacturer: Dynex

DIM800DDM12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
2/10
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
= 25˚C unless stated otherwise
V
V
I
P
V
Q
C(PK)
I
I
CES
GES
max
2
isol
C
PD
t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
Isolation voltage - per module
Partial discharge - per module
2
t value
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
V
T
1ms, T
T
V
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
case
case
GE
R
= 0, t
= 0V
= 85˚C
= 25˚C, T
case
p
= 10ms, T
= 110˚C
1
= 1200V, V
j
= 150˚C
vj
= 125˚C
Test Conditions
2
= 900V, 50Hz RMS
-
www.dynexsemi.com
Max.
1200
1600
6940
2500
800
100
10
20
Units
kA
PC
W
V
V
A
A
V
2
s