DIM600XSM45-F000 Dynex Semiconductor, DIM600XSM45-F000 Datasheet - Page 3

• Manufacturer Part Number: DIM600XSM45-F000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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ELECTRICAL CHARACTERISTICS
T
I
I
V
V
I
I
V
C
C
L
R
SC
Note:
†
*
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
Symbol
CES
GES
F
FM
L is the circuit inductance + L
Measured at the power busbars and not the auxiliary terminals
M
ies
res
INT
GE(TH)
CE(sat)
F
case
Data
= 25°C unless stated otherwise.
†
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance
Internal transistor resistance
Short circuit.I SC
Parameter
M
V
V
V
I
V
V
DC
t
I
I
V
V
--
T
t
V
IEC 60747-9
p
C
F
F
p
j
=1ms
GE
GE
GE
GE
GE
=600A
=600A,T
CE
CE
CE(max)
=80mA,V
125 °C,V
10 us,
=25V,V
=25V,V
=0V,V
=0V,V
= 20V,V
=15V,I
=15V,I
=V
Test Conditions
CES
CE
CE
VJ
C
C
GE
GE
GE
=600A
=600A,T
=V
=V
CC
– L*.di/dt
=125 °C
CE
=0V,f =1MHz
=0V,f =1MHz
=V
=0V
CES
CES
3000V,
CE
,T
case
VJ
=125 °C
=125 °C
I
I
1
2
Min
5.5
2800
2500
3.50
3.90
Typ
132
135
6.5
3.0
3.5
1.8
15
1200
Max
600
7.0
60
1
DIM600XSM45-F000
mA
mA
uA
V
V
V
A
A
V
V
nF
nF
nH
µ
A
A
Units
3
/
7