DIM600DCM17-A000 Dynex Semiconductor, DIM600DCM17-A000 Datasheet
DIM600DCM17-A000
Related parts for DIM600DCM17-A000
DIM600DCM17-A000 Summary of contents
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... The Powerline range of modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM600DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM600DCM17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature j T Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600DCM17-A000 Min. Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode – ...
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... DIM600DCM17-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol Collector cut-off current I CES Gate leakage current I GES Gate threshold voltage V GE(TH) † V Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM † V Diode forward voltage (IGBT arm) ...
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... Test Conditions I = 600A 15V 900V 3.3 G(ON) G(OFF 100nH Diode arm I = 600A, F IGBT arm CES Diode arm dI /dt = 3000A IGBT arm Diode arm IGBT arm DIM600DCM17-A000 Min. Typ. Max. Units - 1200 - ns - 140 - ns - 190 - mJ - 250 - ns - 250 - ns 220 - - mJ 6 370 ...
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... DIM600DCM17-A000 ELECTRICAL CHARACTERISTICS T = 125˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse recovery current ...
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... off E rec 600 800 1000 - (A) C Fig. 6 Typical switching energy vs gate resistance DIM600DCM17-A000 Common emitter 125˚C case V is measured at power busbars ce and not the auxiliary terminals 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Collector-emitter voltage Fig. 4 Typical output characteristics ...
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... DIM600DCM17-A000 1600 Arm 3- 25˚C j Arm 3- 125˚C j 1400 Arm 2- 25˚C j Arm 2- 125˚ measured at power busbars F 1200 and not the auxiliary terminals 1000 800 600 400 200 0 0 0.5 1.0 1.5 Foward voltage, V Fig. 7 Diode typical forward characteristics 1100 Freewheel Diode ...
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... IGBT R (˚C/KW) i (ms) i Freewheel and R (˚C/KW) i Antiparallel Diode (ms) i 0.1 0.001 0.01 Pulse width, t Fig. 11 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Freewheel and Antiparallel Diode Transistor 0.74 5.34 7.52 10.42 0.12 3.89 47.15 257.21 1.23 9.26 12.96 16.53 0.11 4.24 48.75 256. (s) p DIM600DCM17-A000 9/11 ...
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... DIM600DCM17-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Nominal weight: 1050g Module outine type code: D ...
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... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...