DIM400XCM33-F000 Dynex Semiconductor, DIM400XCM33-F000 Datasheet - Page 4

• Manufacturer Part Number: DIM400XCM33-F000
• Description: IGBT Chopper Module
• Manufacturer: Dynex Semiconductor

DIM400XCM33-F000
ELECTRICAL CHARACTERISTICS
T
T
Symbol
Symbol
4/8
case
case
E
E
t
t
t
t
E
E
E
E
d(off)
d(on)
d(off)
d(on)
Q
Q
Q
:
I
I
OFF
OFF
t
t
t
t
ON
ON
rec
rec
rr
rr
f
r
f
r
rr
rr
g
= 25° C unless stated otherwise
= 125° C unless stated otherwise
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Gate charge
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Parameter
Parameter
R
R
I
I
C
C
G(ON)
G(ON)
= 400A, V
= 400A, V
C
R
= 5.6 , C
R
= 5.6 , C
ge
G(ON)
G(ON)
dI
dI
= 110 nF, L ~ 100 nH
Test Conditions
Test Conditions
F
F
V
V
V
C
/dt = 2000 A/ s
V
/dt = 2000 A/ s
V
V
GE
GE
L ~ 100 nH
I
CE
CE
I
CE
I
I
CE
= R
ge
= R
C
GE
C
GE
F
F
= ±15 V, V
= ±15 V, V
= 400 A
= 400 A
= 400 A
= 400 A
= 110 nF
= 1800 V
= 1800 V
= 1800 V
= 1800V
ge
ge
= ±15 V
= ±15 V
G(OFF)
G(OFF)
= 110 nF, L~100nH
= 110 nF, L~100nH
= 8.2
= 8.2
CE
CE
= 1800 V
= 1800 V
Min
Min
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2100
1130
2150
1160
Typ.
Typ.
210
520
245
620
160
330
150
220
600
285
870
300
400
300
10
Max
Max
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C
C