DIM200WKS12-A000 Dynex Semiconductor, DIM200WKS12-A000 Datasheet
DIM200WKS12-A000
Related parts for DIM200WKS12-A000
DIM200WKS12-A000 Summary of contents
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... The DIM200WKS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM200WKS12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... GE C case 1ms 200A 200A 125˚C F case V = 25V 0V 1MHz 125˚ 900V – L*. di/ CE(max) CES 2 IEC 60747-9 DIM200WKS12-A000 Min. Typ. Max. Units - - 0. 4.5 5.5 6 2.2 2 2.6 3 200 400 A - 2.2 2.5 ...
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... DIM200WKS12-A000 ELECTRICAL CHARACTERISTICS - IGBT ARM T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Gate charge g Q Diode reverse recovery charge ...
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... off E rec 0 100 150 200 - (A) C Fig. 6 Typical switching energy vs gate resistance DIM200WKS12-A000 Common emitter T = 125˚C case V is measured at power busbars ce and not the auxiliary terminals 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Collector-emitter voltage Fig. 4 Typical output characteristics T = 125˚ ...
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... DIM200WKS12-A000 400 T = 25˚ 125˚ measured at power busbars F 350 and not the auxiliary terminals 300 250 200 150 100 50 0 0.5 1.0 1.5 2.0 Forward voltage, V Fig. 7 Diode typical forward characteristics 300 T =125˚C case 250 200 150 100 200 ...
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... For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1(K,E) 2(A) Nominal weight: 420g Module outline type code: W Fig. 11 Package details DIM200WKS12-A000 3(C1 5(E ) 7/8 ...
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... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...