DIM200PKM33-A000 Dynex Semiconductor, DIM200PKM33-A000 Datasheet

DIM200PKM33-A000

Manufacturer Part Number

DIM200PKM33-A000

Description

Igbt Modules - Chopper

Manufacturer

Dynex Semiconductor

Datasheet

1.DIM200PKM33-A000.pdf (6 pages)

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FEATURES

APPLICATIONS

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 2400A.

enhancement mode insulated gate bipolar transistor (IGBT)

chopper module configured with the upper arm of the bridge

controlled. The IGBT has a wide reverse bias safe operating

area (RBSOA) plus full 10 s short circuit withstand. This device

is optimised for applications requiring high thermal cycling

capability.

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM200PKM33-A000

Note: When ordering, please use the whole part number.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

10 s Short Circuit Withstand

High Thermal Cycling Capability

Non Punch Through Silicon

Isolated MMC Base with AlN Substrates

Choppers

Traction Auxiliaries

The Powerline range of high power modules includes half

The DIM200PKM33-A000 is a 3300V, n channel

The module incorporates an electrically isolated base plate

KEY PARAMETERS

*(measured at the power busbars and not the auxiliary terminals)

C(PK)

CES

CE(sat)

Fig. 1 Chopper circuit diagram - upper arm control

1(E1/K)

2(C1)

Fig. 2 Electrical connections - (not to scale)

(See package details for further information)

(typ)

(max)

DIM200PKM33-A000

Outline type code: P

4(G

8(C

IGBT Chopper Module

5(E

3300V

3.2V

200A

400A

DIM200PKM33-A000

Preliminary Information

DS5598-1.1 April 2003

3(A)

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