DIM200MHS12-A000 Dynex Semiconductor, DIM200MHS12-A000 Datasheet - Page 7

• Manufacturer Part Number: DIM200MHS12-A000
• Description: Igbt Modules - Half Bridge
• Manufacturer: Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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400
350
300
250
200
150
100
175
150
125
100
50
75
50
25
0
0
0
0
Fig. 9 Diode reverse bias safe operating area
Fig. 7 Diode typical forward characteristics
T
V
and not the auxiliary terminals
case
F
is measured at power busbars
200
=125˚C
0.5
T
T
j
j
= 25˚C
= 125˚C
400
1.0
Reverse voltage, V
Forward voltage, V
600
1.5
800
2.0
R
F
- (V)
- (V)
1000
2.5
1200
3.0
1400
3.5
450
400
350
300
250
200
150
100
1000
50
100
0
10
0.001
0
1
Module I
Chip I
T
V
R
case
ge
g
= 4.7 Ohms
= 15V
Fig. 8 Reverse bias safe operating area
= 125˚C
200
C
Fig. 10 Transient thermal impedance
IGBT
Diode
C
Collector emitter voltage, V
0.01
400
R
R
i
i
i
i
(ms)
(ms)
(˚C/KW)
(˚C/KW)
Pulse width, t
600
DIM200MHS12-A000
0.1
2.10
0.11
4.49
0.10
1
800
p
- (s)
11.62
25.28
3.14
3.21
ce
1000
2
- (V)
43.85
45.60
74.24
38.58
1
3
1200
Transistor
Diode
143.02
113.97
29.53
90.03
4
1400
7/10
10