DIM1200FSM17-A000 Dynex, DIM1200FSM17-A000 Datasheet
DIM1200FSM17-A000
Related parts for DIM1200FSM17-A000
DIM1200FSM17-A000 Summary of contents
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... The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1200FSM17-A000 is a single switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM1200FSM17-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200FSM17-A000 Test Conditions Min. Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor ...
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... DIM1200FSM17-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol I Collector cut-off current CES I Gate leakage current GES V Gate threshold voltage GE(TH) V † Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM V † Diode forward voltage F Input capacitance ...
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... E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy REC Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM1200FSM17-A000 Test Conditions Min 1200A - 15V - 900V - CE ...
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... DIM1200FSM17-A000 TYPICAL CHARACTERISTICS 2400 Common emitter 25˚C case V is measured at power busbars ce and not the auxiliary terminals 2000 1600 1200 800 400 0 0 0.5 1 1.5 2 2.5 Collector-emitter voltage, V Fig. 3 Typical output characteristics 600 Conditions 900V 125°C c 500 R = 1.8Ω g 400 300 ...
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... F 10000 1000 100 2000 1600 1 - (V) R DIM1200FSM17-A000 Chip Module = 125˚C = ±15V = 1.5Ω 200 400 600 800 1000 1200 1400 1600 1800 Collector-emitter voltage (V) ce Fig. 8 Reverse bias safe operating area I DC c(max) = 125˚ 75˚C ...
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... DIM1200FSM17-A000 100 1 2 IGBT R (˚C/KW) 0.5854 4.2582 i (ms) 0.045 2.8869 i Diode R (˚C/KW) 1.5612 5.7426 i (ms) 0.0063516 1.4746 0.001 0.01 0.1 Pulse width Fig. 11 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2000 3 4 5.5286 13 ...
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... Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Aux C Aux 14 140 Nominal weight: 1050g Module outline type code: F DIM1200FSM17-A000 6x Ø7 9/10 ...
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... DIM1200FSM17-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. ...