EMH2301 Sanyo Semicon Device, EMH2301 Datasheet

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EMH2301

Manufacturer Part Number
EMH2301
Description
P-Channel Silicon MOSFET
Manufacturer
Sanyo Semicon Device
Datasheet
www.DataSheet4U.com
Ordering number : EN8725A
EMH2301
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : MA
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
thereby enabling high-density mounting.
1.8V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V GS (off)
Symbol
Symbol
V DSS
V GSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Crss
Ciss
Tstg
I DP
Tch
P T
yfs
P D
I D
t r
t f
SANYO Semiconductors
I D =--1mA, V GS =0V
V DS =- -20V, V GS =0V
V GS = 8V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -1A
I D =--1A, V GS =- -4V
I D =--0.5A, V GS =- -2.5V
I D =--0.3A, V GS =- -1.8V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
Mounted on a ceramic board (900mm
EMH2301
92706 MS IM TC-00000204 / 71006PE MS IM TC-00000038
Conditions
Conditions
2
2
0.8mm) 1unit
0.8mm)
DATA SHEET
min
--0.4
--20
1.9
Ratings
P-channel
typ
11.8
165
260
420
115
3.2
73
60
33
48
43
Continued on next page.
--55 to +150
max
150
--1.4
--20
150
235
520
1.0
1.2
12
--2
--8
10
--1
No.8725-1/4
Unit
Unit
m
m
m
W
W
pF
pF
pF
ns
ns
ns
ns
V
V
A
A
V
V
S
C
C
A
A

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EMH2301 Summary of contents

Page 1

... Ordering number : EN8725A EMH2301 Features The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, • thereby enabling high-density mounting. 1.8V drive. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ...

Page 2

... --10V -- -- =10 D PW= EMH2301 P EMH2301 Symbol Conditions =--10V -4V -2A Qgs V DS =--10V -4V -2A Qgd V DS =--10V -4V - =--2A =0V Electrical Connection 8 0.125 1 V OUT ...

Page 3

... Drain Current Time -- 100 (on --0.01 --0.1 Drain Current EMH2301 --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0 --1.5V --0.2 0 --0.8 --0.9 --1.0 0 IT10538 500 Ta=25 C 400 300 200 100 0 --6 --8 --60 --40 IT10540 -- --1 --0 ...

Page 4

... Ambient Temperature Note on usage : Since the EMH2301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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