EMH2301 Sanyo Semicon Device, EMH2301 Datasheet
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EMH2301
Related parts for EMH2301
EMH2301 Summary of contents
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... Ordering number : EN8725A EMH2301 Features The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, • thereby enabling high-density mounting. 1.8V drive. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ...
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... --10V -- -- =10 D PW= EMH2301 P EMH2301 Symbol Conditions =--10V -4V -2A Qgs V DS =--10V -4V -2A Qgd V DS =--10V -4V - =--2A =0V Electrical Connection 8 0.125 1 V OUT ...
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... Drain Current Time -- 100 (on --0.01 --0.1 Drain Current EMH2301 --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0 --1.5V --0.2 0 --0.8 --0.9 --1.0 0 IT10538 500 Ta=25 C 400 300 200 100 0 --6 --8 --60 --40 IT10540 -- --1 --0 ...
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... Ambient Temperature Note on usage : Since the EMH2301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...