UMD6N Rohm, UMD6N Datasheet - Page 2

• Manufacturer Part Number: UMD6N
• Description: General purpose (dual digital transistors)
• Manufacturer: Rohm

Transistors
! ! ! ! Electrical characteristics (Ta = 25°C)
∗
! ! ! ! Packaging specifications
! ! ! ! Electrical characteristic curves
Type
EMD6
UMD6N
IMD6A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Transition frequency of the transistor
Parameter
Package
Code
Basic ordering
unit (pieces)
DTr
DTr
500
100
200
Fig.1 DC current gain vs. collector
50
1
20
10
2
500
200
100
1k
100µ 200µ 500µ 1m
5
2
1
1k
50
20
10
Fig.3 DC current gain vs. collector
−100µ
5
2
1
(NPN)
(PNP)
−200µ
current
COLLECTOR CURRENT : I
current
COLLECTOR CURRENT : I
−500µ
Ta=100˚C
−1m
−40˚C
25˚C
Ta=100˚C
2m
−2m
8000
T2R
Symbol
−40˚C
BV
BV
BV
V
25˚C
5m 10m 20m 50m100m
I
I
h
−5m
CE (sat)
R
CBO
EBO
f
FE
CBO
CEO
EBO
T
1
−10m
−20m
C
C
V
Min.
3.29
V
100
(A)
CE
(A)
50
50
Taping
CE
3000
5
−
−
−
−
TR
= 5V
−50m−100m
=−5V
Typ. Max. Unit
250
250
4.7
−
−
−
−
−
−
T148
3000
6.11
600
0.5
0.5
0.3
−
−
−
−
MHz
µA
µA
kΩ
V
V
V
V
−
−500m
−200m
−100m
500m
200m
100m
−50m
−20m
−10m
Fig.4 Collector-emitter saturation
50m
20m
10m
−5m
−2m
−1m
Fig.2
5m
2m
1m
−100µ
−1
I
I
I
V
V
I
V
V
1
100 µ 200 µ 500 µ 1m
C
C
E
C
= 50µA
= 1mA
= 50µA
CB
EB
/I
CE
CE
B
−200µ
= 4V
= 50V
= 5V, I
= 10mA, I
= 5mA/0.25mA
voltage vs. collector current
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
Collector-emitter saturation
voltage vs. collector current
−500µ
EMD6 / UMD6N / IMD6A
C
Ta=100˚C
−1m
= 1mA
E
Ta=100˚C
−40˚C
Conditions
= −5mA, f = 100MHz
25˚C
−2m
2m
−40˚C
25˚C
−5m
5m 10m 20m
−
−10m
−20m
C
l
C
C
(A)
l
/l
C
(A)
/l
B
−50m−100m
=20
B
=20
50m 100m
∗