UMH3N Rohm, UMH3N Datasheet - Page 2

• Manufacturer Part Number: UMH3N
• Description: General purpose (dual digital transistors)
• Manufacturer: Rohm

Transistors
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
Transition frequency of the device
Absolute maximum ratings (Ta = 25 C)
Electrical characteristics (Ta = 25 C)
Electrical characteristic curves
500
100
200
50
20
10
1k
100 200
5
2
1
Fig.1 DC current gain vs. collector
Data downloaded from http://www.angliac.com - the website of Anglia - tel: [phone]
Parameter
COLLECTOR CURRENT : I
current
500 1m
Parameter
EMH3,UMH3N
IMH3A
Ta=100 C
2m
25 C
40 C
5m 10m 20m 50m100m
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C
V
Symbol
(A)
CE
V
V
V
Tstg
= 5V
Pc
Tj
CBO
CEO
EBO
I
C
Symbol
BV
BV
BV
V
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
T
EBO
1
150 (TOTAL)
300 (TOTAL)
Min.
3.29
100
50
50
5
55~ 150
Limits
100
150
50
50
5
500m
200m
100m
50m
20m
10m
5m
2m
1m
Fig.2 Collector-emitter saturation
100
Typ.
1
250
250
4.7
200
COLLECTOR CURRENT : I
voltage vs. collector current
Max.
6.11
600
0.5
0.5
0.3
500 1m
Unit
mW
mA
V
V
V
C
C
Ta=100 C
MHz
Unit
k
V
V
V
V
2m
A
A
25 C
40 C
1
2
5m 10m 20m 50m100m
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
=50 A
=1mA
=50 A
/I
B
=4V
=50V
=5V, I
=10mA, I
=5mA/0.25mA
C
l
C
(A)
/l
C
B
=1mA
=20
E
= 5mA, f=100MHz
Conditions
EMH3 / UMH3N / IMH3A