DMBT9015 Dc Components, DMBT9015 Datasheet
DMBT9015
Manufacturer Part Number
DMBT9015
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBT9015.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Classification of h
Designed for use in pre-amplifier of low level and
low noise.
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
1 = Base
2 = Emitter
3 = Collector
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Range
Rank
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
200~450
C ambient temperature unless otherwise specified)
R
(1)
L
DC COMPONENTS CO., LTD.
FE
DISCRETE SEMICONDUCTORS
450~1000
(1)
H
(1)
Symbol
V
V
V
T
(T
P
CBO
CEO
EBO
T
STG
I
Symbol
C
D
V
V
J
BV
BV
BV
A
I
CE(sat)
I
BE(sat)
=25
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
o
C)
-55 to +150
Rating
+150
-100
225
-50
-45
Min
200
100
-5
-50
-45
-5
-
-
-
-
Typ
Unit
mW
mA
o
o
-
V
V
V
-
-
-
-
-
-
-
-
C
C
Max
1000
-0.7
-50
-50
-1
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Unit
Dimensions in inches and (millimeters)
MHz
3
nA
nA
V
V
V
V
V
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
V
V
I
I
I
I
C
C
E
C
C
C
C
.051(1.30)
.035(0.90)
Max
CB
EB
=-100 A, I
=-100 A, I
=-1mA, I
=-100mA, I
=-100mA, I
=-1mA, V
=-10mA, V
=-5V, I
=-50V, I
Test Conditions
.108(0.65)
.089(0.25)
DMBT9015
C
B
CE
=0
=0
E
C
E
CE
=0
B
B
.027(0.67)
.013(0.32)
=0
=0
=-5V
=-5mA
=-5mA
=-5V
.0043(0.11)
.0035(0.09)
SOT-23
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