DMBT9012 Dc Components, DMBT9012 Datasheet
DMBT9012
Manufacturer Part Number
DMBT9012
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBT9012.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Classification of h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Designed for low frequency amplifier applications.
1 = Base
2 = Emitter
3 = Collector
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Range
Rank
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
120~200
C ambient temperature unless otherwise specified)
R
(1)
L
DC COMPONENTS CO., LTD.
FE1
DISCRETE SEMICONDUCTORS
200~350
(1)
H
(1)
Symbol
V
V
V
T
(T
P
T
CBO
CEO
EBO
STG
I
Symbol
C
V
D
V
J
BV
BV
BV
A
h
h
I
I
CE(sat)
BE(sat)
=25
CBO
EBO
FE1
FE2
CBO
CEO
EBO
o
C)
-55 to +150
Rating
+150
-500
225
-40
-20
Min
120
-5
-40
-20
40
-5
-
-
-
-
Typ
Unit
mW
mA
o
o
V
V
V
-
-
-
-
-
-
-
-
-
C
C
Max
-0.1
-0.1
-0.6
-1.2
350
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Unit
Dimensions in inches and (millimeters)
3
V
V
V
V
V
-
-
A
A
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
V
V
I
I
I
I
C
C
E
C
C
C
C
CB
EB
=-100 A, I
.051(1.30)
.035(0.90)
=-100 A, I
=-1mA, I
=-500mA, I
=-500mA, I
=-50mA, V
=-500mA, V
Max
=-3V, I
=-25V, I
Test Conditions
.108(0.65)
.089(0.25)
DMBT9012
C
B
=0
=0
E
C
E
CE
=0
B
B
=0
=0
.027(0.67)
.013(0.32)
CE
=-50mA
=-50mA
=-1V
=-1V
.0035(0.09)
SOT-23
.0043(0.11)
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