DMBT8550 Dc Components, DMBT8550 Datasheet
DMBT8550
Manufacturer Part Number
DMBT8550
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBT8550.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Classification of h
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Designed for general purpose amplifier applications.
1 = Base
2 = Emitter
3 = Collector
Range
Rank
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
120~200
C
DC COMPONENTS CO., LTD.
FE
(1)
150~350
DISCRETE SEMICONDUCTORS
(1)
D
(T
Symbol
V
V
V
T
A
P
=25
CBO
CEO
EBO
T
STG
I
C
Symbol
D
V
V
J
BV
BV
BV
I
I
CE(sat)
BE(sat)
h
CBO
EBO
o
f
FE
CBO
CEO
EBO
T
C)
250~400
-55 to +150
E
Rating
+150
-500
225
-25
-20
Min
120
150
-25
-20
-5
-5
-
-
-
-
Typ
Unit
mW
mA
o
o
-
-
-
-
-
-
-
-
-
V
V
V
C
C
Max
-0.1
-0.6
-1.2
400
-1
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
3
V
V
V
V
V
-
A
A
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
I
I
I
V
V
I
I
I
I
.063(1.60)
.055(1.40)
C
C
E
C
C
C
C
CB
EB
=-10 A
=-10 A
=-1mA
=-500mA, I
=-500mA, I
=-50mA, V
=-20mA, V
.051(1.30)
.035(0.90)
Max
=-3V
=-20V
Test Conditions
.108(0.65)
.089(0.25)
DMBT8550
CE
CE
B
B
=-50mA
=-50mA
=-10V, f=100MHz
=-1V
.027(0.67)
.013(0.32)
.0043(0.11)
.0035(0.09)
SOT-23
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