DMBT8050 Dc Components, DMBT8050 Datasheet
DMBT8050
Manufacturer Part Number
DMBT8050
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBT8050.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Classification of h
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Designed for general purpose amplifier applications.
1 = Base
2 = Emitter
3 = Collector
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Range
Rank
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
120~200
C
DC COMPONENTS CO., LTD.
FE
(1)
150~350
DISCRETE SEMICONDUCTORS
(1)
D
(T
Symbol
V
V
V
T
A
P
=25
T
CBO
CEO
EBO
STG
I
C
Symbol
D
V
V
J
BV
BV
BV
I
CE(sat)
BE(sat)
h
CBO
o
f
FE
CBO
CEO
EBO
T
C)
250~500
-55 to +150
E
Rating
+150
500
225
Min
25
20
120
150
25
20
5
5
-
-
-
Unit
Typ
mW
mA
o
o
V
V
V
-
-
-
-
-
-
-
-
C
C
Max
500
0.6
1.2
1
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
3
V
V
V
V
V
-
A
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
V
I
I
I
I
C
C
E
C
C
C
C
CB
=10 A, I
=10 A, I
=1mA, I
=500mA, I
=500mA, I
=50mA, V
=20mA, V
.051(1.30)
.035(0.90)
Max
=20V, I
Test Conditions
B
DMBT8050
.108(0.65)
.089(0.25)
C
E
=0
E
=0
=0
CE
CE
=0
B
B
=50mA
=50mA
=1V
=10V, f=100MHz
.027(0.67)
.013(0.32)
.0035(0.09)
SOT-23
.0043(0.11)
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