DMBT5087 Dc Components, DMBT5087 Datasheet
DMBT5087
Manufacturer Part Number
DMBT5087
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBT5087.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Designed for low noise, high gain, general purpose
amplifier applications.
1 = Base
2 = Emitter
3 = Collector
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
(1)
DISCRETE SEMICONDUCTORS
(1)
(T
Symbol
V
V
V
T
A
P
=25
CBO
CEO
EBO
T
STG
I
C
Symbol
D
V
J
V
BV
BV
BV
I
I
CE(sat)
h
h
h
CBO1
CBO2
BE(sat)
C
o
FE1
FE2
FE3
f
CBO
CEO
EBO
T
ob
C)
-55 to +150
Rating
+150
225
-50
-50
-50
Min
250
250
250
-50
-50
-3
40
-3
-
-
-
-
-
Typ
Unit
mW
mA
o
o
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
C
C
-0.85
Max
-0.3
800
-10
-50
4
-
-
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
3
nA
nA
pF
V
V
V
V
V
-
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
V
V
I
I
I
I
I
I
V
C
C
E
C
C
C
C
C
C
CB
CB
CB
=-10 A
=-100 A
=-1mA
=-10mA, I
=-10mA, I
=-0.1mA, V
=-1mA, V
=-10mA, V
=-0.5mA, V
.051(1.30)
.035(0.90)
Max
=-10V
=-35V
=-5V, f=100MHz
Test Conditions
.108(0.65)
.089(0.25)
DMBT5087
CE
B
B
CE
=-1mA
=-1mA
CE
CE
=-5V
=-5V
.027(0.67)
.013(0.32)
=-5V
=-5V, f=100MHz
.0043(0.11)
.0035(0.09)
SOT-23
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