DMBT2369 Dc Components, DMBT2369 Datasheet
DMBT2369
Manufacturer Part Number
DMBT2369
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBT2369.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Designed for high speed switching applications.
1 = Base
2 = Emitter
3 = Collector
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Output Capacitance
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
(1)
DISCRETE SEMICONDUCTORS
(1)
(T
Symbol
V
V
V
T
A
P
=25
CBO
T
CES
EBO
I
STG
C
Symbol
D
V
J
V
BV
BV
BV
BV
I
CE(sat)
h
h
BE(sat)
C
CBO
o
FE1
FE2
CBO
CEO
EBO
CES
ob
C)
-55 to +150
Rating
+150
500
225
4.5
Min
700
40
40
4.5
40
40
15
40
20
-
-
-
Unit
Typ
mW
mA
o
o
-
V
V
V
-
-
-
-
-
-
-
-
-
C
C
Max
400
250
850
120
4
-
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
3
mV
mV
nA
pF
V
V
V
V
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
I
V
I
I
I
I
V
C
C
C
E
C
C
C
C
.051(1.30)
.035(0.90)
Max
CB
=10 A, I
CB
=10 A, I
=10 A, I
=10mA, I
=10mA, I
=10mA, I
=10mA, V
=100mA, V
=20V, I
=5V, f=1MHz, I
Test Conditions
.108(0.65)
.089(0.25)
DMBT2369
C
E
B
B
E
B
B
=0
=0
=0
CE
=0
=0
=1mA
=1mA
CE
.027(0.67)
.013(0.32)
=1V
=2V
E
=0
.0043(0.11)
.0035(0.09)
SOT-23
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