DST847BDJ Diodes, DST847BDJ Datasheet - Page 3

• Manufacturer Part Number: DST847BDJ
• Description: DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
• Manufacturer: Diodes

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Collector-Base Capacitance
Notes:
DST847BDJ
Document number: DS32035 Rev. 1 - 2
4. Short duration pulse test used to minimize self-heating effect.
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
Characteristic (Note 4)
I = 1.2mA
B
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I = 1.4mA
B
1
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I = 1.6mA
B
2
@T
I = 1.8mA
B
3
A
= 25°C unless otherwise specified
I = 2mA
I = 0.8mA
I = 0.6mA
I = 0.4mA
I = 0.2mA
I = 1mA
B
B
B
B
B
B
4
V
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CES
(BR)CEO
(BR)EBO
I
C
CE(sat)
BE(sat)
BE(on)
h
CBO
f
FE
cbo
T
5
www.diodes.com
3 of 5
Min
100
200
580
100
50
50
45
6
Typical
8.35
150
150
220
300
122
760
880
650
725
170
1.5
65
50
450
400
350
300
250
200
150
100
50
0
Fig. 5 Typical DC Current Gain vs. Collector Current
T = 150°C
T = 100°C
1000
1100
Max
T = -55°C
T = 25°C
470
125
300
750
800
A
A
15
A
I , COLLECTOR CURRENT (mA)
A
C
1
MHz
Unit
mV
mV
mV
nA
pF
V
V
V
V
I
I
I
I
V
I
I
I
I
I
I
I
I
V
f = 100MHz
V
C
C
C
E
C
C
C
C
C
C
C
C
CB
CE
CB
= 1μA, I
= 10mA, I
= 10μA, I
= 10μA, I
= 1mA, I
= 10μA, V
= 2.0mA, V
= 100mA, I
= 10mA, I
= 100mA, I
= 2.0mA, V
= 10mA, V
10
= 30V
= 5V, I
= 10V, f = 1.0MHz
www.DataSheet4U.com
Test Condition
C
B
C
B
B
= 0
B
B
= 0
DST847BDJ
= 10mA,
CE
= 0
= 0
B
B
CE
= 0.5mA
= 0.5mA
V
CE
CE
CE
= 5.0mA
= 5.0mA
= 5V
= 5V
= 5V
= 5V
= 5V
© Diodes Incorporated
100
January 2010