VEC2813 Sanyo Semicon Device, VEC2813 Datasheet - Page 4
VEC2813
Manufacturer Part Number
VEC2813
Description
N-Channel Silicon MOSFET / Schottky Barrier Diode
Manufacturer
Sanyo Semicon Device
Datasheet
1.VEC2813.pdf
(6 pages)
www.DataSheet.co.kr
100
1.0
1.0
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.0
0.8
0.6
0.4
0.2
10
10
0.01
3
2
7
5
3
2
7
5
3
2
0
0
3
2
7
5
3
2
7
5
3
2
0.1
0
0
V DS =10V
I D =3A
V DS = 10 V
2
1
20
2
3
2
5
Ambient Temperature, Ta -- C
3
40
Total Gate Charge, Qg -- nC
7
3
0.1
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
5
60
V GS -- Qg
y
4
P D -- Ta
2
7
fs
3
1.0
80
5
-- I D
5
t d (on)
7
6
100
1.0
2
7
120
2
3
3
8
[MOSFET]
[MOSFET]
V DD =10V
V GS = 4 V
[MOSFET]
[MOSFET]
5
140
5
IT10937
IT03496
IT03498
IT10953
9
7
7
160
10
10
10
VEC2813
0.001
1000
0.01
0.01
100
1.0
0.1
1.0
0.1
10
10
10
7
5
3
2
7
5
3
2
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
I DP =12A
I D =3A
2 3
2
Operation in this
area is limited by R DS (on).
Ciss, Coss, Crss -- V DS
0.2
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
5 7
Diode Forward Voltage, V SD -- V
0.1
6
0.4
2 3
I S -- V SD
8
A S O
0.6
5 7 1.0
10
12
0.8
2
2
14
3
0.8mm)
5 7 10
16
No. A0384-4/6
[MOSFET]
[MOSFET]
[MOSFET]
PW 10 s
1.0
V GS =0V
f=1MHz
18
IT03497
IT10938
IT10952
2 3
1.2
20
Datasheet pdf - http://www.DataSheet4U.net/