VEC2812 Sanyo Semicon Device, VEC2812 Datasheet - Page 3

• Manufacturer Part Number: VEC2812
• Description: N-Channel Silicon MOSFET / Schottky Barrier Diode
• Manufacturer: Sanyo Semicon Device

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Switching Time Test Circuit
[MOSFET]
P.G
4V
0V
PW=10 s
D.C. 1%
400
350
300
250
200
150
100
2.0
1.6
1.2
0.8
0.4
50
0
0
V IN
0
0
I D =0.5A
0.1
V IN
0.2
Drain-to-Source Voltage, V DS -- V
2
G
50
Gate-to-Source Voltage, V GS -- V
1.0A
0.3
R DS (on) -- V GS
V DD =10V
D
I D -- V DS
0.4
4
S
I D =1A
R L =10
0.5
VEC2812
0.6
6
V OUT
0.7
0.8
8
[MOSFET]
Ta=25 C
0.9
IT02901
IT02985
VEC2812
1.0
10
t rr Test Circuit
[SBD]
Duty 10%
10 s
50
400
350
300
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50
0
0
--60
0
V DS =10V
--40
0.2
--5V
--20
100
0.4
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
0
0.6
R DS (on) -- Ta
20
I D -- V GS
0.8
10
40
1.0
60
1.2
80
1.4
100
t rr
No. A0392-3/6
1.6
120
[MOSFET]
1.8
140
IT02902
IT11826
160
2.0
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