VEC2609 Sanyo Semicon Device, VEC2609 Datasheet - Page 5

• Manufacturer Part Number: VEC2609
• Description: N-Channel and P-Channel Silicon MOSFETs
• Manufacturer: Sanyo Semicon Device

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0.01
100
1.0
0.1
1.2
1.0
0.8
0.6
0.4
0.2
10
10
10
0.01
0
7
5
3
2
7
5
3
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
V DS =10V
I D =1.4A
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
20
Mounted on a ceramic board (900mm
5
0.5
5 7
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Operation in this
area is limited by R DS (on).
Ambient Temperature, Ta -- C
40
Total Gate Charge, Qg -- nC
0.1
10
2
60
V GS -- Qg
1.0
3
P D -- Ta
A S O
5 7
15
80
1.0
1.5
100
2
2
20
3
0.8mm) 1unit
120
5 7
2.0
10
2
[Nch / Pch]
25
f=1MHz
140
0.8mm)
2
IT03301
IT03302
IT10296
IT10298
[Nch]
[Nch]
[Nch]
10 s
3
2.5
160
30
5
VEC2609
--0.01
1000
--1.0
--0.1
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--10
100
--0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
V DS = --6V
I D = --2.5A
2 3
1
--2
Operation in this
area is limited by R DS (on).
Drain-to-Source Voltage, V DS -- V
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
5 7
Total Gate Charge, Qg -- nC
--0.1
2
--4
V GS -- Qg
2
3
3
A S O
--6
5 7
--1.0
4
2
0.8mm) 1unit
--8
2
3
5
5 7
No. A0103-5/6
--10
--10
f=1MHz
6
10 s
IT06900
IT06901
IT10297
[Pch]
[Pch]
[Pch]
2
--12
7
3
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