VEC2606 Sanyo Semicon Device, VEC2606 Datasheet
VEC2606
Related parts for VEC2606
VEC2606 Summary of contents
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... Ordering number : ENA0856 VEC2606 Features Best suited for inverter applications. • Low ON-resistance. • The VEC2606 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting. • 4V drive. • Mounting height 0.75mm. • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage ...
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... Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm (typ) 7012-002 0 0.65 2.9 VEC2606 Symbol Conditions R DS (on =1A =10V R DS (on =1A =4V Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz Crss V DS =20V, f=1MHz t d (on) See specified Test Circuit. ...
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... [Nch] 1.5 2.0 2.5 3.0 3.5 IT12545 [Nch] Ta=25 ° IT12547 --30V --10V --0.75A =40Ω OUT PW=10µs D.C.≤1% G VEC2606 P.G 50Ω --2.0 --1.5 --1.0 --0 --0.2 --0.4 --0.6 Drain-to-Source Voltage -- 10V --2 -- --0.5 --1.0 --1.5 --2.0 --0.2 Gate-to-Source Voltage ...
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... Diode Forward Voltage Time -- I D 100 1 0.1 Drain Current VEC2606 [Nch 100 120 140 160 IT12549 y fs [Nch =10V 1 IT12551 [Nch =0V 0 ...
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... Single pulse Mounted on a ceramic board (900mm 0. 0.01 0.1 Drain-to-Source Voltage 1.2 1.0 0.9 0.8 0.6 0.4 0 Ambient Temperature °C VEC2606 [Nch] f=1MHz IT12557 [Nch IT12559 [Nch] PW≤10µs ✕0.8mm) 1unit ...
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... Note on usage : Since the VEC2606 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...