VEC2605 Sanyo Semicon Device, VEC2605 Datasheet - Page 5

• Manufacturer Part Number: VEC2605
• Description: P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device Applications
• Manufacturer: Sanyo Semicon Device

--0.01
--1.0
--0.1
100
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
10
1.0
0.8
0.6
0.4
0.2
--0.01
3
2
7
5
3
2
7
0
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
V DS = --10V
I D = --1A
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
0.2
20
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
5 7
Ambient Temperature, Ta -- C
Operation in this
area is limited by R DS (on).
0.4
40
Total Gate Charge, Qg -- nC
--0.1
--5
0.6
60
V GS -- Qg
2 3
P D -- Ta
A S O
0.8
5 7
80
--1.0
100
1.0
--10
2 3
2
0.8mm) 1unit
120
1.2
5 7
f=1MHz
10 s
--10
140
1.4
IT08606
IT08608
IT08610
IT08612
[Pch]
[Pch]
[Pch]
[Pch]
2
--15
160
1.6
3
VEC2605
1000
0.01
100
1.0
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.2
1.0
0.9
0.8
0.6
0.4
0.2
10
0.01
2
7
5
3
2
7
5
3
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
V DS =10V
I D =3A
2 3
Operation in this
area is limited by R DS (on).
20
1
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
5 7
Ambient Temperature, Ta -- C
40
5
2
Total Gate Charge, Qg -- nC
0.1
60
V GS -- Qg
3
2 3
P D -- Ta
A S O
5 7
10
80
4
1.0
100
5
2
2 3
0.8mm) 1unit
120
15
6
5 7
f=1MHz
No.8197-5/6
10 s
10
140
7
IT08607
IT08609
IT08611
IT08613
[Nch]
[Nch]
[Nch]
[Nch]
2
160
20
8
3