VEC2408 Sanyo Semicon Device, VEC2408 Datasheet - Page 2

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VEC2408

Manufacturer Part Number
VEC2408
Description
N-Channel Silicon MOSFET
Manufacturer
Sanyo Semicon Device
Datasheet

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Continued from preceding page.
Package Dimensions
unit : mm (typ)
7012-002
Switching Time Test Circuit
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
8
4V
0V
1
PW=10µs
D.C.≤1%
7
Parameter
2
V IN
2.9
6 5
0.65
3
4
V IN
0.3
G
50Ω
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
V DD =10V
0.15
D
S
I D =1.5A
R L =6.67Ω
Symbol
VEC2408
t d (on)
t d (off)
V SD
Qgs
Qgd
Qg
t r
t f
V OUT
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4V, I D =3.5A
V DS =10V, V GS =4V, I D =3.5A
V DS =10V, V GS =4V, I D =3.5A
I S =3.5A, V GS =0V
VEC2408
Conditions
Electrical Connection
1
8
7
2
min
6
3
Ratings
typ
0.85
0.8
2.2
5
4
58
58
58
11
6
max
1.2
No. A0567-2/4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
Unit
nC
nC
nC
ns
ns
ns
ns
V
Datasheet pdf - http://www.DataSheet4U.net/

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