MBT35200 ON Semiconductor, MBT35200 Datasheet - Page 2

• Manufacturer Part Number: MBT35200
• Description: High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
• Manufacturer: ON Semiconductor

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Collector–Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage (Note 4.)
Base–Emitter Saturation Voltage (Note 4.)
Base–Emitter Turn–on Voltage (Note 4.)
Cutoff Frequency
Input Capacitance (V
Output Capacitance (V
Turn–on Time (V
Turn–off Time (V
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
CB
CES
EB
= –0.1 mAdc, I
= –10 mAdc, I
= –0.1 mAdc, I
= –1.0 A, V
= –1.5 A, V
= –2.0 A, V
= –0.8 A, I
= –1.2 A, I
= –2.0 A, I
= –1.2 A, I
= –2.0 A, V
= –100 mA, V
= –4.0 Vdc)
= –35 Vdc, I
= –35 Vdc)
B
B
B
B
CC
CC
CE
CE
CE
CE
(1)
= –0.008 A)
= –0.012 A)
= –0.02 A)
= –0.012 A)
CE
B
E
C
= –1.5 V)
= –1.5 V)
= –3.0 V)
= –3.0 V)
= –10 V, I
= –10 V, I
E
EB
= 0)
= 0)
= 0)
= 0)
= –5.0 V, f = 100 MHz)
CB
= –0.5 V, f = 1.0 MHz)
= –3.0 V, f = 1.0 MHz)
Characteristic
B1
B1
= –100 mA, I
= I
B2
= –100 mA, I
(T
A
= 25 C unless otherwise noted)
C
= –1 A, R
C
= 1 A, R
http://onsemi.com
L
MBT35200MT1
2%
= 3 W)
L
= 3 W)
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
I
BE(sat)
Cibo
BE(on)
CBO
h
CES
EBO
t
t
f
on
off
FE
T
–5.0
Min
–35
–55
100
100
100
100
—
—
—
—
—
—
—
—
—
—
—
—
Typical
–0.125
–0.175
–0.260
–0.03
–0.03
–0.01
–0.68
–0.81
–7.0
–45
–65
200
200
200
600
225
—
85
35
–0.875
–0.15
–0.20
–0.31
–0.85
Max
–0.1
–0.1
–0.1
400
650
100
—
—
—
—
—
—
—
—
mAdc
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
nS
nS
pF
pF
V
V
V