PBSS9110X Philips Semiconductors, PBSS9110X Datasheet - Page 3

• Manufacturer Part Number: PBSS9110X
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Limiting values
9397 750 14765
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
B
Fig 1. Power derating curves
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
ambient temperature
storage temperature
P
(W)
2
tot
O
2.0
1.6
1.2
0.8
0.4
Rev. 01 — 2 May 2005
3
0
, standard footprint
0
(1)
(2)
(3)
2
40
O
3
, standard footprint.
Conditions
open emitter
open base
open collector
single pulse;
t
T
p
amb
2
100 V, 1 A PNP low V
80
1 ms
25 C
120
T
amb
006aaa408
[1]
[2]
[3]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
( C)
Min
-
-
-
-
-
-
-
-
-
-
2
65
65
collector mounting pad.
160
PBSS9110X
CEsat
Max
0.55
1.4
2.0
150
+150
+150
120
100
5
1
3
0.3
(BISS) transistor
Unit
V
V
V
A
A
A
W
W
W
C
C
C
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