PBSS8110Y Philips Semiconductors, PBSS8110Y Datasheet - Page 5

• Manufacturer Part Number: PBSS8110Y
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
Table 7:
T
9397 750 12567
Product data sheet
Symbol
I
I
I
h
CBO
CES
EBO
j
Fig 3. Transient thermal impedance as a function of pulse time; typical values.
FE
= 25 C unless otherwise specified.
(10)
(K/W)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Z
10
th
10
10
10
1
3
2
1
10
Mounted on FR4 PCB; mounting pad for collector = 1 cm
= 1.
= 0.75.
= 0.5.
= 0.33.
= 0.2.
= 0.1.
= 0.05.
= 0.02.
= 0.01.
= 0.
(10)
5
Characteristics
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
10
4
10
Conditions
V
V
T
V
V
V
V
V
V
3
j
CB
CB
CE
EB
CE
CE
CE
CE
= 150 C
= 80 V; I
= 80 V; I
= 80 V; V
= 4 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
10
C
E
E
C
C
C
C
2
= 0 A
BE
Rev. 01 — 2 June 2004
= 0 A
= 0 A;
= 1 mA
= 250 mA
= 0.5 A
= 1 A
= 0 V
2
10
.
1
[1]
[1]
100 V, 1 A NPN low V
1
Min
-
-
-
-
150
150
100
80
10
Typ
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PBSS8110Y
CEsat
10
2
Max
100
50
100
100
-
500
-
-
(BISS) transistor
t
p
001aaa797
(s)
10
Unit
nA
nA
nA
3
A
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