PBSS8110S Philips Semiconductors, PBSS8110S Datasheet - Page 5

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PBSS8110S

Manufacturer Part Number
PBSS8110S
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
PACKAGE OUTLINE
2004 Aug 13
100 V, 1 A
NPN low V
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
CEsat
d
b
E
3
1
2
0.66
0.55
b 1
(BISS) transistor
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43A
JEITA
scale
2.5
5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L
max.
2.5
1
(1)
L
PROJECTION
EUROPEAN
PBSS8110S
Product specification
ISSUE DATE
b
97-02-28
04-06-28
c
e 1
e
SOT54

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