PBSS8110D Philips Semiconductors, PBSS8110D Datasheet - Page 3

• Manufacturer Part Number: PBSS8110D
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Limiting values
9397 750 12566
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
I
P
T
T
T
CM
C
B
Fig 1. Power derating curves.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
pad.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm
pad.
(1) FR4 PCB; 6 cm
(2) FR4 PCB; 1 cm
(3) FR4 PCB; standard footprint.
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
continuous collector current
continuous base current
total power dissipation
junction temperature
operating ambient temperature
storage temperature
(mW)
2
2
P
collector mounting pad.
collector mounting pad.
tot
800
600
400
200
Rev. 01 — 23 April 2004
0
0
40
Conditions
open emitter
open base
open collector
T
T
(1)
(2)
(3)
j(max)
amb
100 V, 1 A NPN low V
80
25 C
120
T
amb
001aaa493
[1]
[2]
[3]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
Min
-
-
-
-
-
-
-
-
-
-
65
65
160
PBSS8110D
CEsat
Max
120
100
5
3
1
0.3
300
550
700
150
+150
+150
(BISS) transistor
2
2
collector mounting
collector mounting
Unit
V
V
V
A
A
A
mW
mW
mW
C
C
C
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