PBSS5250T Philips Semiconductors, PBSS5250T Datasheet
PBSS5250T
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PBSS5250T Summary of contents
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... DATA SHEET ge PBSS5250T PNP low V Product specification DISCRETE SEMICONDUCTORS M3D088 (BISS) transistor CEsat 2003 Oct 09 ...
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... Product specification PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance PIN DESCRIPTION 1 base 2 emitter 3 collector Top view MAM256 Fig.1 Simplified outline (SOT23) and symbol. PACKAGE PBSS5250T MAX. UNIT 150 VERSION SOT23 ...
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... Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm 2003 Oct 09 CONDITIONS open emitter open base open collector single peak note 1 amb note 2 amb CONDITIONS in free air; note 1 in free air; note 2 3 Product specification PBSS5250T MIN. MAX. UNIT 300 mA 300 mW ...
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... 100 mA; note note 100 mA 100 MHz MHz Product specification PBSS5250T MIN. TYP. MAX. UNIT 100 100 nA 200 200 130 90 mV 180 mV 300 mV 150 m 1 ...
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... OUTLINE VERSION IEC SOT23 2003 Oct scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC EIAJ TO-236AB 5 Product specification PBSS5250T detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 ISSUE DATE 97-02-28 99-09-13 ...
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... Product specification PBSS5250T DEFINITION These products are not Philips Semiconductors ...
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... Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. ...