PBSS5240T Philips Semiconductors, PBSS5240T Datasheet - Page 3

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PBSS5240T

Manufacturer Part Number
PBSS5240T
Description
PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm
2004 Jan 15
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
40 V, 2 A
PNP low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
CEsat
PARAMETER
(BISS) transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
in free air; note 1
in free air; note 2
3
25 C; note 1
25 C; note 2
CONDITIONS
CONDITIONS
65
65
MIN.
VALUE
417
260
300
480
+150
150
+150
PBSS5240T
Product specification
40
40
5
2
3
300
MAX.
UNIT
K/W
K/W
V
V
V
A
A
mA
mW
mW
C
C
C
2
2
UNIT
.
.

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