PBSS5220V Philips Semiconductors, PBSS5220V Datasheet - Page 7

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PBSS5220V

Manufacturer Part Number
PBSS5220V
Description
2A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
PBSS5220V
Manufacturer:
NXP/恩智浦
Quantity:
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Manufacturer:
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Product data sheet
Fig 7. Base-emitter saturation voltage as a function of
Fig 9. Collector current as a function of
V
BEsat
(1) T
(2) T
(3) T
(V)
(A)
I
C
1.2
1.0
0.8
0.6
0.4
0.2
2.0
1.6
1.2
0.8
0.4
0
I
collector current; typical values
T
collector-emitter voltage; typical values
10
C
0
amb
amb
amb
amb
/I
B
1
= 20
= 55 C
= 25 C
= 100 C
= 25 C
1
I
B
= 13 mA
2
10
(1)
(2)
(3)
10
2
4
V
10
CE
006aaa430
006aaa432
3
I
C
(V)
11.7 mA
10.4 mA
9.1 mA
(mA)
7.8 mA
6.5 mA
5.2 mA
3.9 mA
2.6 mA
1.3 mA
10
6
Rev. 01 — 13 June 2005
4
Fig 8. Collector-emitter saturation resistance as a
Fig 10. Collector-emitter saturation resistance as a
R
R
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
CEsat
CEsat
( )
( )
10
10
10
10
10
10
10
1
1
2
1
3
2
1
I
function of collector current; typical values
T
function of collector current; typical values
10
10
C
C
C
C
amb
amb
amb
amb
/I
/I
/I
/I
B
B
B
B
1
1
20 V, 2 A PNP low V
= 20
= 100
= 50
= 10
= 100 C
= 25 C
= 55 C
= 25 C
1
1
10
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
10
PBSS5220V
2
2
CEsat
(1)
(2)
(3)
10
10
(BISS) transistor
006aaa431
006aaa433
3
I
3
I
www.DataSheet4U.com
C
C
(mA)
(1)
(2)
(3)
(mA)
10
10
4
4
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