PBSS4320X Philips Semiconductors, PBSS4320X Datasheet - Page 7

• Manufacturer Part Number: PBSS4320X
• Description: 20 V / 3 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 03
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
20 V, 3 A
NPN low V
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
I
I
I
I
I
I
I
V
I
V
C
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CB
I
I
I
I
I
= 0.5 A; I
= 1 A; I
= 2 A; I
= 3 A; I
= 3 A; I
= 2 A; I
= 3 A; I
= 100 mA; V
C
C
C
C
C
= 20 V; I
= 20 V; I
= 20 V; V
= 5 V; I
= 2 V
= 2 V; I
= 10 V; I
= 0.1 A
= 0.5 A
= 1 A; note 1
= 2 A; note 1
= 3 A; note 1
B
B
B
B
B
B
= 50 mA
= 100 mA
= 300 mA; note 1
= 300 mA; note 1
= 100 mA
= 300 mA; note 1
CONDITIONS
C
B
C
7
E
E
E
= 0 A
= 50 mA
= 1 A
BE
= 0 A
= 0 A; T
= i
CE
= 0 V
e
= 5 V; f = 100 MHz 100
= 0 A; f = 1 MHz
j
= 150 C
220
220
220
200
150
1.1
MIN.
85
1.1
TYP.
PBSS4320X
Product specification
100
50
100
100
70
120
240
310
105
1.2
35
MAX.
nA
nA
nA
mV
mV
mV
mV
m
V
V
V
MHz
pF
UNIT
A