PBSS4230T Philips Semiconductors, PBSS4230T Datasheet - Page 4

• Manufacturer Part Number: PBSS4230T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Sep 29
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
30 V, 2 A
NPN low V
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
V
V
I
I
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 750 mA; I
= 1 A; I
= 2 A; I
= 500 mA; I
= 2 A; I
= 100 mA; V
= 4 V; I
= 30 V; I
= 30 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
4
B
B
B
CONDITIONS
C
= 50 mA; note 1
= 200 mA; note 1
= 200 mA; note 1
C
C
C
C
C
E
E
E
= 0
= 100 mA
= 500 mA
= 1 A
= 2 A
= 100 mA
B
B
B
B
= 0
= 0; T
= I
CE
= 1 mA
= 50 mA
= 15 mA
= 50 mA; note 1
e
= 10 V;
= 0; f = 1 MHz
j
= 150 C
350
300
300
150
100
MIN.
470
450
420
250
45
70
120
130
240
140
230
15
TYP.
PBSS4230T
Product specification
100
50
100
70
100
180
180
320
200
1.1
0.75
20
MAX.
nA
nA
mV
mV
mV
mV
mV
m
V
V
MHz
pF
UNIT
A