PBSS4220V Philips Semiconductors, PBSS4220V Datasheet
PBSS4220V
Related parts for PBSS4220V
PBSS4220V Summary of contents
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... PBSS4220V NPN low V Rev. 01 — 6 February 2006 1. Product profile 1.1 General description NPN low V Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. 1.2 Features 1.3 Applications 1.4 Quick reference data Table 1: Symbol Parameter V CEO CEsat [1] CEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface ...
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... amb junction temperature Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat Simplified outline Symbol sym014 ...
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... Ceramic PCB standard footprint 2 3 (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat Min Max 65 +150 65 +150 006aaa424 80 120 160 amb 2 © ...
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... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm Device mounted on a ceramic PCB standard footprint Reflow soldering is the only recommended soldering method Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat Conditions Min Typ [1] [4] in free air - - [2] [ ...
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... 100 MHz collector capacitance MHz Pulse test: t 300 s; 0.02. p Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat Min Typ = ...
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... I (mA) C (1) I (2) I (3) I Fig 6. Collector-emitter saturation voltage as a Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat 006aaa663 (1) (2) ( (mA amb = 25 C amb ...
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... V (V) CE (1) I (2) I (3) I Fig 10. Collector-emitter saturation resistance as a Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat 006aaa667 (1) (2) ( (mA 100 C amb = 25 C amb ...
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... mA mA open Bon Boff Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform ...
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... Dimensions in mm Packing methods Package Description SOT666 2 mm pitch tape and reel 4 mm pitch tape and reel For further information and the availability of packing methods, see Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat 1.7 0.6 1.5 0 0.3 0.1 ...
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... Philips Semiconductors 11. Soldering Fig 14. Reflow soldering footprint PBSS4220V_1 Product data sheet 0.55 2.00 1.70 1. solder lands 0.075 solder resist Reflow soldering is the only recommended soldering method. Rev. 01 — 6 February 2006 PBSS4220V NPN low V (BISS) transistor CEsat 2.75 2.45 2.10 1. 0.375 (4 ) 1.20 2.20 2.50 placement area ...
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... Document ID Release date PBSS4220V_1 20060206 PBSS4220V_1 Product data sheet NPN low V Data sheet status Change notice Product data sheet - Rev. 01 — 6 February 2006 PBSS4220V (BISS) transistor CEsat Doc. number Supersedes - - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 6 February 2006 PBSS4220V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 February 2006 Document number: PBSS4220V_1 Published in The Netherlands (BISS) transistor ...