PBSS304NZ Philips Semiconductors, PBSS304NZ Datasheet - Page 6

• Manufacturer Part Number: PBSS304NZ
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
PBSS304NZ_1
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
300 s;
Rev. 01 — 18 September 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 5.2 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= 0.15 A
= 60 V; I
= 60 V; I
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 12.5 V
B
B
B
B
B
B
B
B
B
B
60 V, 5.2 A NPN low V
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 80 mA
= 200 mA
= 80 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
B
B
C
E
E
C
E
;
= 50 mA
= 260 mA
= 0 A
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
I
= 0 A
= 0 A;
= i
C
= 100 mA;
= 3 A;
e
= 0 A;
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
300
300
250
150
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS304NZ
CEsat
Typ
-
-
-
520
500
470
250
120
25
50
85
105
155
145
205
200
39
51
0.82
0.94
0.75
15
95
110
360
195
555
130
48
(BISS) transistor
Max
100
50
100
-
-
-
-
-
35
70
120
150
220
210
305
280
55
76
0.9
1.05
0.85
-
-
-
-
-
-
-
70
Unit
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV
m
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
6 of 14
A