EMT2DXV6T5 ON Semiconductor, EMT2DXV6T5 Datasheet

no-image

EMT2DXV6T5

Manufacturer Part Number
EMT2DXV6T5
Description
Dual General Purpose Transistor
Manufacturer
ON Semiconductor
Datasheet
www.DataSheet4U.com
EMT2DXV6T5
Dual General Purpose
Transistor
PNP Dual
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
1. FR−4 @ Minimum Pad.
April, 2004 − Rev. 0
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
Derate above 25 C
Thermal Resistance,
Total Device Dissipation
Derate above 25 C
Thermal Resistance,
Junction and Storage
This transistor is designed for general purpose amplifier
Lead−Free Solder Plating
Low V
Semiconductor Components Industries, LLC, 2004
Junction-to-Ambient
Junction-to-Ambient
Temperature Range
(Both Junctions Heated)
(One Junction Heated)
CE(SAT)
Characteristic
Characteristic
Rating
, < 0.5 V
T
T
A
A
= 25 C
= 25 C
Symbol
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Value
−100
−6.0
Max
Max
−60
−50
357
350
500
250
2.9
4.0
1
mW/ C
mW/ C
mAdc
Unit
Unit
Unit
mW
mW
C/W
C/W
V
V
V
C
†For information on tape and reel specifications,
EMT2DXV6T5
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(3)
Device
CASE 463A
6
SOT−563
5 4
Style 2
ORDERING INFORMATION
Q
2
1 2
3M = Specific Device Code
D
http://onsemi.com
3
(2)
(4) (5)
= Date Code
SOT−563
Package
Publication Order Number:
8000/Tape & Reel
EMT2DXV6T5/D
(1)
(6)
2 mm Pitch
MARKING
DIAGRAM
Shipping†
Q
3M D
1

Related parts for EMT2DXV6T5

EMT2DXV6T5 Summary of contents

Page 1

... Date Code ORDERING INFORMATION Device Package Shipping† EMT2DXV6T5 SOT−563 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: EMT2DXV6T5/D ...

Page 2

... Vdc −1.0 mAdc Transition Frequency (V = −12 Vdc −2.0 mAdc MHz Output Capacitance (V = −12 Vdc 300 ms, D.C. 2. Pulse Test: Pulse Width www.DataSheet4U.com EMT2DXV6T5 ( Symbol = −50 mAdc (BR)CBO = −1.0 mAdc (BR)CEO = −50 mAdc, I ...

Page 3

... Figure 1.5 1 0.5 0 0.01 0 BASE CURRENT (mA) B Figure 3. Collector Saturation Region www.DataSheet4U.com Figure 5. Capacitance EMT2DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS 1000 300 mA 100 250 200 150 100 − 900 800 A 700 600 ...

Page 4

... BSC J 0.08 0.18 0.003 0.007 K 0.10 0.30 0.004 0.012 S 1.50 1.70 0.059 0.067 STYLE 2: PIN 1. EMITTER 1 2. EMITTER 2 3. BASE 2 4. COLLECTOR 2 5. BASE 1 6. COLLECTOR 1 0.45 0.0177 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. EMT2DXV6T5/D ...

Related keywords