EMX1DXV6T5 ON Semiconductor, EMX1DXV6T5 Datasheet

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EMX1DXV6T5

Manufacturer Part Number
EMX1DXV6T5
Description
Dual NPN General Purpose Amplifier Transistor
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMX1DXV6T5G
Manufacturer:
ON
Quantity:
30 000
EMX1DXV6T1,
EMX1DXV6T5
Dual NPN General Purpose
Amplifier Transistor
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Junction and Storage
This NPN transistor is designed for general purpose amplifier
Reduces Board Space
High h
Low V
These are Pb−Free Devices
T
Junction-to-Ambient
T
Junction-to-Ambient
Temperature Range
A
(Both Junctions Heated)
A
(One Junction Heated)
= 25°C
= 25°C
FE
CE(sat)
Characteristic
Characteristic
, 210−460 (Typical)
Rating
, < 0.5 V
(T
A
= 25°C)
Preferred Devices
V
V
V
Symbol
Symbol
Symbol
T
(BR)CBO
(BR)CEO
(BR)EBO
R
R
J
P
P
, T
I
qJA
qJA
C
D
D
stg
357 (Note 1)
350 (Note 1)
500 (Note 1)
250 (Note 1)
2.9 (Note 1)
4.0 (Note 1)
−55 to +150
Value
Max
Max
100
7.0
60
50
mW/°C
mW/°C
1
mAdc
°C/W
°C/W
Unit
Unit
Unit
mW
mW
Vdc
Vdc
Vdc
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
PURPOSE AMPLIFIER
DUAL NPN GENERAL
Tr
ORDERING INFORMATION
SURFACE MOUNT
1
3X = Specific Device Code
M
G
MARKING DIAGRAM
TRANSISTORS
(1)
(6)
http://onsemi.com
= Month Code
= Pb−Free Package
6
CASE 463A
SOT−563
STYLE 1
1
3X M G
Publication Order Number:
G
1
(5)
(2)
www.DataSheet4U.com
EMX1DXV6T1/D
Tr
(3)
(4)
2

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EMX1DXV6T5 Summary of contents

Page 1

... EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space premium. Features • Reduces Board Space • ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. ORDERING INFORMATION Device EMX1DXV6T1 EMX1DXV6T1G EMX1DXV6T5 EMX1DXV6T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. EMX1DXV6T1, EMX1DXV6T5 (T = 25°C) A Symbol V (BR)CBO V (BR)CEO V ...

Page 3

... CE 2 1.5 1 0.5 0 0.01 0 BASE CURRENT (mA) B Figure 3. Collector Saturation Region (V) EB Figure 5. Capacitance EMX1DXV6T1, EMX1DXV6T5 1000 160 mA 140 mA 120 mA 100 mA 100 0.1 900 T = 25°C 800 A 700 600 500 400 300 ...

Page 4

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com EMX1DXV6T1, EMX1DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F NOTES: 1 ...

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