EMX18 Rohm, EMX18 Datasheet - Page 2

• Manufacturer Part Number: EMX18
• Description: General purpose transistors (dual transistors)
• Manufacturer: Rohm

Transistors
Type
EMX18
UMX18N
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics (Ta=25 C)
Packaging specifications
Electrical characteristic curves
1000
500
200
100
50
20
10
5
2
1
0
Fig.1 Grounded emitter propagation
BASE TO EMITTER VOLTAGE : V
characteristics
Parameter
Package
Code
Basic ordering
unit (pieces)
0.5
1.0
V
CE
BE
= 2V
(V)
8000
T2R
1.5
Symbol
BV
BV
BV
V
Cob
I
I
CE (sat)
h
CBO
EBO
f
FE
Taping
CBO
CEO
EBO
T
1000
Min.
270
500
200
100
3000
15
12
50
20
10
6
TN
5
2
1
1
Fig.2 DC current gain vs.
Typ. Max. Unit
2
320
COLLECTOR CURRENT : I
7.5
90
collector current
5
250
680
0.1
0.1
10
Ta = 125 C
20
-40 C
25 C
MHz
mV
PF
V
V
V
A
A
50 100 200
I
I
I
V
V
I
V
V
V
C
C
E
C
=1 0 A
CB
EB
CE
=1 0 A
= 1mA
/I
CE
CB
C
V
B
(mA)
=15 V
=6 V
=2 V, I
= 2V, I
= 10V, I
=20 0mA/10mA
CE
= 2V
500
1000
C
E
= 10mA
= 10mA, f = 100MHz
E
= 0A, f = 1MHz
Conditions
Fig.3 Collector-emitter saturation voltage
1000
500
200
100
50
20
10
5
2
1
1
EMX18 / UMX18N
2
Ta = 125 C
COLLECTOR CURRENT : I
-40 C
5
vs. collector current ( )
25 C
10 20
50 100 200
I
C
C
/I
(mA)
B
= 20
500 1000